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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features * High Dynamic Range Cascadable 50 or 75 Gain Block * 3 dB Bandwidth: 50 MHz to 1.3 GHz * 17.5 dBm Typical P1 dB at 0.5 GHz * 3.6 dB Typical Noise Figure at 0.5 GHz * Surface Mount Plastic Package * Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section "Tapeand-Reel Packaging for Semiconductor Devices." Description The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems. 05 Plastic Package The MSA-series is fabricated using Agilent's 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1105 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 550 mW +13 dBm 150C -65 to 150C Thermal Resistance[2,4]: jc = 125C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 8 mW/C for TC > 124C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP Parameters and Test Conditions: Id = 60 mA, ZO = 50 Power Gain (|S21 | 2) f = 0.05 GHz f = 0.5 GHz f = 1.0 GHz f = 0.1 to 1.0 GHz f = 0.1 to 1.0 GHz f = 0.1 to 1.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz Units dB dB dB dB GHz Min. 10.0 Typ. 12.7 12.0 10.5 1.0 1.3 1.5:1 1.7:1 Max. GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient dB dBm dBm psec V mV/C 4.4 3.6 17.5 30.0 200 5.5 -8.0 6.6 Notes: 1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P). Part Number Ordering Information Part Number MSA-1105-TR1 MSA-1105-STR No. of Devices 500 10 Container 7" Reel Antistatic Bag For more information, see "Tape and Reel Packaging for Semiconductor Devices". 3 MSA-1105 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 60 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k .0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000 .80 .26 .07 .06 .05 .06 .07 .09 .10 .11 .13 .15 .16 .18 .28 .38 .46 .53 -17 -62 -48 -38 -41 -58 -74 -91 -105 -116 -128 -136 -145 -152 174 150 133 118 19.0 13.9 12.8 12.7 12.7 12.6 12.4 12.2 12.0 11.8 11.5 11.2 10.9 10.5 8.8 7.1 5.6 4.2 8.94 4.98 4.36 4.33 4.31 4.26 4.19 4.10 4.00 3.88 3.76 3.63 3.49 3.37 2.75 2.28 1.90 1.62 171 163 174 174 170 162 154 146 138 131 123 116 109 102 72 48 28 11 -26.0 -16.8 -16.4 -16.3 -16.4 -16.2 -16.1 -15.8 -15.6 -15.4 -15.0 -14.7 -15.5 -14.1 -13.2 -12.1 -11.9 -11.6 .050 .144 .151 .153 .152 .155 .157 .163 .166 .171 .178 .184 .188 .197 .219 .248 .254 .262 51 15 4 2 3 5 7 8 8 10 11 11 11 11 7 0 -4 -8 .81 .26 .08 .06 .06 .08 .10 .12 .14 .17 .18 .21 .22 .24 .31 .34 .38 .40 -16 -64 -52 -48 -52 -73 -91 -105 -116 -126 -135 -144 -151 -159 170 151 134 122 0.53 0.93 1.08 1.08 1.09 1.08 1.07 1.06 1.05 1.04 1.03 1.01 1.01 1.00 1.00 0.99 1.02 1.04 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C, ZO = 50 (unless otherwise noted) 16 14 12 G p (dB) 10 8 6 4 NF (dB) 20 2 0 .02 0 .05 0.1 0.5 1.0 2.0 3.0 0 2 4 Vd (V) 6 8 FREQUENCY (GHz) ZO = 50 100 TC = +85C TC = +25C P1 dB (dBm) 18 17 16 P1 dB 13 12 40 5 4 3 -25 +25 TEMPERATURE (C) +85 NF GP 11 80 T = -25C C 60 Id (mA) ZO = 75 Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA. 22 I d = 70 mA 5.5 I d = 70 mA I d = 60 mA I d = 40 mA 20 P1 dB (dBm) 5.0 18 NF (dB) I d = 60 mA 4.5 16 4.0 14 I d = 40 mA 3.5 12 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. Gp (dB) 05 Plastic Package Dimensions GROUND 4 0.030 0.89 RF INPUT 0.030 DIA 0.76 RF OUTPUT AND DC BIAS A 1 3 0.030 0.010 0.76 0.25 (4 PLCS) GROUND 2 0.135 0.015 3.42 0.25 (4 PLCS) 0.030 0.76 0.050 1.27 0.020 0.51 0.008 0.002 0.20 0.05 0.145 3.68 0.100 0.010 2.54 0.25 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 0.0005 0.010 (0.013 0.25) www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-9557E (11/99) |
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